Abstract Sky-high optical nonlinearities make semiconductors ideal platforms for multifunctional photonic devices. The fabrication of such complex devices could greatly benefit from in-volume ultrafast laser writing for monolithic and contactless integration. Ironically, as exemplified for Si, nonlinearities act as an efficient immune system that self-protects the material from internal permanent modifications. Predicting high-intensity ultrashort-pulse propagation beyond Si is further limited by incomplete descriptions of carrier dynamics in narrow-gap materials. Here, we demonstrate that filamentation universally dictates ultrashort laser pulse propagation in various semiconductors. The effective key nonlinear parameters extracted differ markedly from past measurements with low-intensity pulses, while temporal scaling laws for these parameters are also derived. Based on these findings, appropriate temporal-spectral shaping is proposed for tailored energy deposition inside semiconductors. The effective parameters also provide predictive inputs for semiconductor backside processing, microelectronics security, and high-harmonic, supercontinuum and terahertz wave generation.
Chambonneau et al. (Sat,) studied this question.