This research demonstrates a high-power nanosecond laser improves laser slicing of 4H-SiC wafers, indicating advancements in material processing efficiency.
Laser slicing of 4H-SiC wafers offers high efficiency and minimal material loss. While nanosecond lasers are the preferred light source, simultaneously achieving high output power, excellent beam quality (M2 < 1.3), and broad operational tunability remains an outstanding challenge. This study developed a highly efficient nanosecond laser source using hybrid fiber and solid-state multi-stage amplification architecture. With excellent beam quality (M2 < 1.3), it achieves the highest output power, widest continuously tunable pulse width range, and broadest repetition rate range currently reported for 4H-SiC laser slicing. This advancement is poised to advance the continued development of 4H-SiC slicing technology.
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Hong et al. (2026) studied this question.
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