What question did this study set out to answer?

To develop a high-efficiency nanosecond laser source for slicing 4H-SiC wafers.

February 16, 20260 citationsOpen Access

High-Power and Fiber-Solid Hybrid MOPA Nanosecond Laser for High-Efficiency 4H-SiC Wafers Slicing

CHChunquan HongHuazhong University of Science and Technology JWJincheng WenHuazhong University of Science and Technology HLHuailiang LiuHuazhong University of Science and Technology

Key Points

To develop a high-efficiency nanosecond laser source for slicing 4H-SiC wafers.
Developed a hybrid fiber and solid-state multi-stage amplification architecture.
Tested beam quality under M2 < 1.3.
Evaluated output power and pulse width range.
Achieved the highest output power reported for 4H-SiC slicing.
Demonstrated excellent beam quality maintained during operation.
Delivered the widest continuously tunable pulse width and repetition rate range.

Abstract

Laser slicing of 4H-SiC wafers offers high efficiency and minimal material loss. While nanosecond lasers are the preferred light source, simultaneously achieving high output power, excellent beam quality (M2 < 1.3), and broad operational tunability remains an outstanding challenge. This study developed a highly efficient nanosecond laser source using hybrid fiber and solid-state multi-stage amplification architecture. With excellent beam quality (M2 < 1.3), it achieves the highest output power, widest continuously tunable pulse width range, and broadest repetition rate range currently reported for 4H-SiC laser slicing. This advancement is poised to advance the continued development of 4H-SiC slicing technology.

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