We investigate the depth-dependent quantum transport phenomena in the insulating barrier within a magnetic tunnel junction (MTJ), with a focus on the selective application of Rashba spin–orbit coupling (SOC) to the interfacial layers. The interface layer exhibits the most pronounced oscillatory behavior in the Berry curvature, indicating strong quantum interference effects. The oscillation amplitude and the dependence on the Rashba SOC strength decrease as we move towards the central layer, suggesting a diminishing influence of the quantum confinement effects. The ability to selectively apply and tune the Rashba SOC in the interfacial layers provides a valuable tool for manipulating the Berry curvature and the associated geometric phase effects. The findings of this study provide insights into layer-dependent quantum interference mechanisms that could inform future spintronic device engineering.
Ghobadi et al. (Sat,) studied this question.