Ternary heteroatom (B, P, N) doped graphene for high-performance supercapacitors

January 1, 2026RSC AdvancesOpen Access

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Key Points

The aim is to explore the impact of boron, phosphorus, and nitrogen doping on the performance of graphene-based supercapacitors.
Synthesis of boron, phosphorus, and nitrogen doped graphene materials.
Characterization of electrical properties, focusing on supercapacitance.
Analysis of charge mobility and surface activity.
Enhanced supercapacitance due to the synergistic effects of B, P, and N dopants.
Increased charge mobility attributed to boron incorporation.
Pseudocapacitive behavior predominantly caused by phosphorus, improving overall energy storage.

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This research demonstrates improved supercapacitance through B, P, and N doping in graphene, suggesting a path for better energy storage.

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Kaur et al. (2026) studied this question.

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