Effects of plasma gas interface processing on ferroelectric property of TiN/Hf 0.5 Zr 0.5 O ₂ /TiN ferroelectric device

HZO ferroelectric capacitor device have sparked considerable interest among researchers due to their high-speed storage capability and low-power consumption characteristics. Plasma gas interface processing can regulate the oxygen vacancy distribution, improve the interface state and increase the performance and endurance of HZO ferroelectric memories. In this paper, we systematically discuss the effects of the passivation (refers to gas interfacial treatment) process on the ferroelectric properties of ferroelectric capacitors across varying functional layer thicknesses, gas atmospheres, and passivation interface locations. Under different interface processing conditions, the double remanent polarization (2P r ) and endurance of HZO ferroelectric memories could reach up to 39 µC/cm 2 and 10 8 with ferroelectric layer thickness at 10 nm, and the top and bottom interfaces are passivated at the same time used by NH 3 plasma. Furthermore, we propose a two-element (N–H) collaborate mechanism that helps elucidate the independent and synergistic effects of ammonia gas in enhancing the ferroelectric properties of nitrogen and hydrogen at the top and bottom interfaces. This work provided a valuable reference for optimizing the ferroelectric memories components.