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January 1, 2026RSC Applied InterfacesOpen Access

Hf x Zr 1-x O ₂ Thin Films from Chemical Vapor Deposition of Fluorinated β-Ketoenamine Precursors

Billy Oktora Abdilah Fauzi Andreas Lichtenberg Corinna Hegemann Thomas Fischer Marcel Schmickler Harish Parala Anjana Devi Sanjay Mathur

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Key Points

This research aims to develop and characterize new molecular precursors for the deposition of hafnium-zirconium-oxide coatings.
Synthesis of Zr(IV) and Hf(IV) complexes
Application of complexes in chemical vapor deposition (CVD)
Formation of hafnium-zirconium-oxide (HZO) coatings
Successful synthesis of new Zr(IV) and Hf(IV) precursors
Demonstration of effective CVD of mixed hafnium-zirconium-oxide thin films
Enhanced properties of obtained coatings compared to traditional methods

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Implication

New precursors enable the deposition of hafnium-zirconium-oxide thin films, suggesting advances in coating technologies.

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Cite This Study

Fauzi et al. (2026) studied this question.

synapsesocial.com/papers/699a9d8e482488d673cd3702 https://doi.org/10.1039/d5lf00360a

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