Low Temperature Pressureless Sintering Micron-Ag Paste Enabling High Quality SiC Device Packaging

Micron-Ag pressureless sintering faces grave challenges in high power SiC device packaging with simultaneously possessing low sintering temperature and excellent bonding strength and thermal conductivity. Herein, a cost-effective micron-Ag paste with high sintering driving force was designed and prepared by solvent engineering and preheating temperature regulation. Consequently, the optimized Ag sintered joint yields a record shear strength of 43.9 MPa at a sintering temperature of 250 °C. Furthermore, the packaged SiC device with micron-Ag paste possesses power cycle numbers of 4525 cycles, which is 1.6 times higher than that of SiC device packaged by the traditional SAC solder. The findings provide valuable guidelines to develop high quality micron-Ag paste for high power electronics packaging.