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This work aims to investigate the relaxation dynamics of intermediate states in boron vacancy spin defects under optical pumping.

February 27, 2026Science AdvancesOpen Access

Intermediate excited state relaxation dynamics of boron vacancy spin defects in hexagonal boron nitride

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Investigations reveal relaxation dynamics of spin defects in hexagonal boron nitride, suggesting improved quantum sensor performance.

This work aims to investigate the relaxation dynamics of intermediate states in boron vacancy spin defects under optical pumping.
Conducted relaxation time measurements from intermediate state to ground state across a broad temperature range.
Utilized simulations to analyze the evolution of spin populations and ground-state polarization with excitation rates.
Optimized magnetic resonance pulse sequences to enhance spin manipulation efficiency.
Measured a 24.0(3)-nanosecond relaxation time from the intermediate state to the ground state at room temperature.
Observed that the relaxation time approximately doubles at lower temperatures.
Enhanced sensitivity of quantum sensors based on boron vacancies through optimized pulse sequences.

Konrad et al. (2026) studied this question.

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