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Magnetic field-dependent analysis reveals tunable spin-relaxation of boron-vacancy defects in hBN, indicating high-field sensing potential.
We perform magnetic field- and temperature-dependent measurements of the spin-relaxation time of boron-vacancy defects in hBN for high-field sensing applications. The relaxation time exhibits non-monotonic behavior, indicating a field-tunable relaxation mechanism.
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Solanki et al. (2025) studied this question.
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