What does this research mean for the field?

Negatively charged boron vacancy (VB−) defects in isotopically enriched hexagonal boron nitride exhibit spin-coherence times of T2* = 13.8 ns and T2 = 108.7 ns when measured using broadband microwave pulses. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

What question did this study set out to answer?

Characterize the spin-coherence times of negatively charged boron vacancy defects in hexagonal boron nitride thin films using broadband microwave driving.

September 2, 2026Applied Physics LettersOpen Access

Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses

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Authors

YNYuki Nakamura TITakuya Iwasaki SNShu Nakaharai

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Overview

Experimental study reveals nanosecond spin-coherence times of boron vacancy defects in hexagonal boron nitride thin films, highlighting their potential for nanoscale quantum sensing.

Key Points

Characterize the spin-coherence times of negatively charged boron vacancy defects in hexagonal boron nitride thin films using broadband microwave driving.
Transferred an isotopically enriched h10B15N thin film directly onto a narrow gold wire to generate intense broadband microwave pulses.
Conducted Ramsey interference and Hahn-echo sequence measurements to resolve dephasing and coherence dynamics under subgigahertz Rabi driving.
Demonstrated subgigahertz Rabi oscillations of negatively charged boron vacancy defects.
Measured a Gaussian-like decay in Ramsey interference, yielding an inhomogeneous spin-dephasing time T2* of 13.8 ± 0.5 ns.
Determined a spin-coherence time T2 of 108.7 ± 5.5 ns with a stretch factor αHE of 1.25 ± 0.11 via Hahn-echo measurements.

Cite This Study

Nakamura et al. (2026) studied this question.

synapsesocial.com/papers/6a97e20ec562ede874ec61d7 https://doi.org/10.1063/5.0341305

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September 2, 2026Applied Physics LettersOpen Access

Spin-coherence characterization of boron vacancy defects in hexagonal boron nitride with broadband microwave pulses

View Full Paper

Ask AI

Bookmark

Authors

YNYuki Nakamura TITakuya Iwasaki SNShu Nakaharai

Discussion

Member takes

Overview

Experimental study reveals nanosecond spin-coherence times of boron vacancy defects in hexagonal boron nitride thin films, highlighting their potential for nanoscale quantum sensing.

Key Points

Characterize the spin-coherence times of negatively charged boron vacancy defects in hexagonal boron nitride thin films using broadband microwave driving.
Transferred an isotopically enriched h10B15N thin film directly onto a narrow gold wire to generate intense broadband microwave pulses.
Conducted Ramsey interference and Hahn-echo sequence measurements to resolve dephasing and coherence dynamics under subgigahertz Rabi driving.
Demonstrated subgigahertz Rabi oscillations of negatively charged boron vacancy defects.
Measured a Gaussian-like decay in Ramsey interference, yielding an inhomogeneous spin-dephasing time T2* of 13.8 ± 0.5 ns.
Determined a spin-coherence time T2 of 108.7 ± 5.5 ns with a stretch factor αHE of 1.25 ± 0.11 via Hahn-echo measurements.

Cite This Study

Nakamura et al. (2026) studied this question.

synapsesocial.com/papers/6a97e20ec562ede874ec61d7 https://doi.org/10.1063/5.0341305

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