Electrochemical Anodization as a Reliable and Sustainable Processes for Gate Dielectrics in Organic Thin‐Films Transistors

Reliable operation of organic thin‐film transistors (OTFTs) at low voltage is a key requirement for the development of energy‐efficient and flexible electronics. A key bottleneck in this regard lies in the gate dielectric, which must combine high capacitance, high electrical robustness, low leakage, and low interfacial defect density, and all of these under the additional requirement of being processable at low temperature on a large area to be in line with the vision of flexible and large‐area electronics. Electrochemical anodization (EAO) has emerged as a promising strategy to meet these requirements by enabling ambient, electrolyte‐based formation of thin, high‐quality metal oxide dielectrics. In this concept article, we highlight the role of EAO across both lateral and vertical OTFT configurations, demonstrating its potential to enable high‐performance devices with low operating voltages. Representative examples include flexible transistor arrays and MHz‐operating OTFTs fabricated entirely under ambient conditions. We further discuss key challenges related to electrolyte formulation, interface engineering, and mechanical reliability, positioning EAO as a sustainable and scalable route for next‐generation organic electronics.