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February 1, 2026Microelectronic Engineering

Dependence of single-pulse avalanche ruggedness in μH inductor circuit on SiC MOSFETs structure

Lingling Lai Zhixin Liu Yingxin Cui Fanpeng Zeng Litian Huang Shoulai Gong Kuan Yew Cheong Jisheng Han

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Key Points

Single-pulse avalanche ruggedness highly depends on the structure of SiC MOSFETs involved in the circuit.
Key evidence shows significant variations in ruggedness metrics across different SiC MOSFET designs.
Observational analysis on the performance of μH inductor circuits utilizing various SiC MOSFET configurations.
The findings highlight the need for tailored designs to enhance circuit performance and reliability.

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Implication

Observational analysis investigates single-pulse avalanche ruggedness in SiC MOSFET structures, suggesting optimization potential.

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Cite This Study

Lai et al. (2026) studied this question.

synapsesocial.com/papers/69a7658abadf0bb9e87d97a0 https://doi.org/10.1016/j.mee.2026.112453

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