Analysis demonstrates significant enhancement of anomalous Hall angle in Weyl semimetals, suggesting new manipulation strategies.
Theoretically, introducing inhomogeneous magnetization into magnetic topological Weyl semimetals can dramatically enhance the anomalous Hall conductivity owing to the chiral-gauge field effect. However, an enhancement strategy remains elusive. Here, we demonstrate the successful generation of inhomogeneous magnetization in a recently discovered magnetic Weyl semimetal Co₃Sn₂S₂ by introducing a dopant with strong spin-orbit coupling. The giant anomalous Hall angle reached 42% at 130 K, even under a relatively weak magnetic field (∼0.1 T), making it the highest reported value. Theoretical and magnetic microstructure analyses suggest that the significantly enhanced anomalous Hall effect may be due to the chiral-gauge field induced directly by inhomogeneous magnetization in real-space. Furthermore, considering the electronic band structure of Co₃Sn₂S₂ and the chiral-gauge field, the theoretical Hall resistivity is quantitatively in good agreement with the experimental value. This study demonstrated the feasibility of dramatically manipulating the physical properties of Anomalous-Hall-angmagnetic topological materials using magnetic microstructure engineering.
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Cao et al. (2026) studied this question.
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