Correlative methodology uncovers failure areas in semiconductor devices, suggesting improved diagnostic techniques.
This article introduces a correlative, in-situ methodology that integrates atomic force microscopy directly into the vacuum chamber of a scanning electron microscope or focused ion beam. This method is useful for analyzing increasingly complex structures, particularly for identifying the specific area of electrical failure in devices such as SRAMs, logic, vias, interconnects, and non-visual test failures.
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Dao et al. (2026) studied this question.
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