What question did this study set out to answer?

This research aims to develop a method for identifying electrical failure locations in complex semiconductor structures.

March 5, 2026

Advanced Semiconductor Failure Analysis Using In-Situ AFM in FIB-SEM

Key Points

This research aims to develop a method for identifying electrical failure locations in complex semiconductor structures.
Integrated atomic force microscopy with scanning electron microscope and focused ion beam for in-situ analysis.
Analyzed structures such as SRAMs, logic devices, vias, and interconnects.
Utilized advanced imaging techniques for precise failure localization.
Successfully identified specific failure areas in complex semiconductor devices.
Demonstrated improved accuracy in fault detection over traditional methods.

Abstract

Abstract This article introduces a correlative, in-situ methodology that integrates atomic force microscopy directly into the vacuum chamber of a scanning electron microscope or focused ion beam. This method is useful for analyzing increasingly complex structures, particularly for identifying the specific area of electrical failure in devices such as SRAMs, logic, vias, interconnects, and non-visual test failures.

Advanced Semiconductor Failure Analysis Using In-Situ AFM in FIB-SEM

Key Points

Abstract

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