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This research aims to investigate how B-site co-doping affects the symmetry and optoelectronic properties of vacancy-ordered double perovskites.

March 5, 2026Journal of Materials Chemistry A0 citations

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B-site Co-doping-Induced Symmetry Breaking for Enhanced Optoelectronic Properties in Vacancy-Ordered Double Perovskites

HQHao QuChongqing University of Posts and Telecommunications MLMingjun LiChongqing University of Posts and Telecommunications JYJiangyu YangChongqing University of Posts and Telecommunications

Key Points

This research aims to investigate how B-site co-doping affects the symmetry and optoelectronic properties of vacancy-ordered double perovskites.
Analyzed the structural properties of vacancy-ordered double perovskites
Employed optical spectroscopy to assess band-edge transitions
Investigated various co-doping combinations to evaluate symmetry effects
B-site co-doping led to symmetry breaking in the crystal structure
Improved optical transitions were observed due to enhanced stability
Demonstrated potential for practical applications in optoelectronic devices

Abstract

Vacancy-ordered double perovskites (i.e., Cs2SnBr6) have attracted considerable attention due to their intrinsic stability and lead-free composition. However, their high-symmetry cubic framework results in parity-forbidden band-edge transitions, severely suppressing optical...

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B-site Co-doping-Induced Symmetry Breaking for Enhanced Optoelectronic Properties in Vacancy-Ordered Double Perovskites

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