Chemical mechanical polishing (CMP) is a critical process in precision manufacturing, providing the planarization and defect control essential for applications in semiconductors, optics, advanced materials, and nanotechnology. It underpins the fabrication of integrated circuits, microelectromechanical systems, and high-performance optical components. As device architectures become increasingly complex and incorporate diverse material systems, understanding the temporal dynamics of material removal rates and the spatial evolution of surface topography has become indispensable. This review offers a comprehensive synthesis of progress in CMP, focusing on the mechanisms governing material removal, advancements in modeling the temporal distribution of material removal rates, and the spatial distribution of surface topography. Existing models are critically evaluated to identify their assumptions, limitations, and practical implications. A unified framework is proposed to integrate temporal and spatial dynamics, providing actionable insights for process optimization. By addressing key challenges and exploring future directions, this review aims to advance CMP modeling methodologies, equipping the field to meet the evolving demands of semiconductor technology and other precision engineering disciplines.
Geng et al. (Sat,) studied this question.