Enhancing meandering VO2 microwire bolometer sensitivity via confined electron layer

VO2 bolometers offer excellent detection sensitivity, especially when temperature biased close to the transition temperature. We show here that a tunable-sensitivity bolometer with an extended range can be achieved using VO2 thin films using a specially designed gated meander device structure. While the electric field does not influence the transition temperature of the meandering microwire, a two-dimensional confined electron layer is observed to emerge upon the application of a lateral gate field, leading to improved photosensitivity, by up to 50%, over a wide range of incidence laser powers without any external temperature bias. Our results highlight that electric field control in VO2 facilitates low-power operation, underscoring its potential for energy-efficient and long-lasting electronic applications.