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April 24, 2026Crystal Growth & Design

Wide-Range Tuning of Insulator–Metal Transition via Microstructure and Defect Engineering of Sputtered VO 2 Thin Films

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Authors

ARAmit Kumar RanaKGK. GurukrishnaHJHarsh Nitinkumar Joshi

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Overview

Demonstrates broad-band modulation of the metal–insulator transition in VO2 thin films, indicating potential for advanced electronics.

Key Points

  • The research aims to explore how microstructure and defect engineering can tune the insulator-metal transition in VO2 thin films.
  • Utilized RF magnetron sputtering to grow VO2 films on various substrates.
  • Engineered strain and microstructures by varying sputtering power.
  • Analyzed films using X-ray diffraction, Raman spectroscopy, and electron microscopy.
  • Achieved broad-band tuning of the metal-insulator transition by over 20 °C near room temperature.
  • Epitaxial strain primarily influences Tc tuning in VO2 on α-Al2O3, while microstructure affects transport properties of films on Si and quartz.
  • Demonstrated scalable fabrication techniques for VO2-based functional devices.

Cite This Study

Rana et al. (2026) studied this question.

synapsesocial.com/papers/69eb09c9553a5433e34b40d7https://doi.org/10.1021/acs.cgd.6c00404
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Tunable insulator–metal transition in VO2-based nanocomposite thin films via strain and defect engineering2026
  2. 2Orientation‐Engineered Insulator‐Metal Transition in Vanadium Dioxide2026
  3. 3Defect-Engineered VO2 Films: From Abrupt Phase Transition to Continuous Infrared Modulation via High-Vacuum Annealing2026
  4. 4Influence of Metal Oxide Interface Layers on the Thermochromic Properties of VO <sub>2</sub> Thin Films Deposited by Magnetron Sputtering2026
  5. 5Low-temperature growth of environmentally stable epitaxial VO2 thin films2026 · 1 citations