Size-dependent Energy gap in Some Semiconductor Nanomaterials

This research discusses how the variation in band gap with the change of particle size nano level for CdS, GaAs, InN, and InP has been measured theoretically from a model based on energy differences between nanoparticles and their corresponding bulks. This study clearly reveals that band gap energy is not a particular value but rather it varies strongly with the size of particles. That is to say, what has become increasingly clear from this theoretical study is an increase in the band gap energy for smaller particles of CdS, GaAs, InN, and InP. This phenomena is related to the synthesis of semiconductor nanomaterials. Predictions from this model have worked fairly well in earlier experiments offering significant encouragement regarding its validity.