Schottky Barrier Engineering in n ‐Type Organic Source‐Gated Transistors Enabling High Conductance

Organic source‐gated transistors (OSGTs) offer promising advantages for low‐power electronics, including high on/off current ratios and reduced saturation drain voltages. However, high Schottky barriers at source electrodes limit their performance, resulting in lower apparent charge carrier mobility, reduced on‐current, and elevated threshold voltages compared to conventional organic field‐effect transistors (OFETs). Here, a modified source electrode architecture that addresses these fundamental limitations of OSGTs through strategic integration of Schottky and Ohmic contact regions is presented. By reducing the Schottky contact length from 600 to 240 µm and inserting Ohmic Ag contacts, a thinner depletion envelope while maintaining barrier functionality is created. The modified OSGTs demonstrate performance enhancements: mobility increases nearly tenfold from 2.92 × 10 −3 to 1.99 × 10 −2 cm 2 V −1 s −1 , approaching OFET levels, while threshold voltage decreases from 35.31 to 20.44 V. Moreover, modified OSGTs exhibit exceptional thermal stability with an activation energy of only 0.021 eV, substantially lower than 0.097 eV in OFETs, enabling temperature‐independent charge transport through suppression of hopping conduction. Technology computer‐aided design simulations validate enhanced conductivity and charge density distribution. This electrode engineering strategy offers a viable pathway toward stable, low‐voltage organic electronics with potential applications in flexible and wearable devices.