Transient analysis reveals charge dynamics in bipolar transistors, indicating significant influences of built-in field and recombination.
Transient analysis of bipolar transistors including built-in field and recombination in the base is derived. For the bipolar transistor switching from the saturation to cutoff, minority carriers in the neutral base are mainly removed through the collector terminal, especially for the BJT with large base grading. The charge partitioning between the emitter and collector is a strong function of the strength of aiding field and boundary conditions for switching.
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