Heterostructure bipolar transistors: What should we build?

This is the authors' abstract. We don't add key points for this paper.

The paper discusses likely future developments in heterostructure bipolar technology, especially by MBE. This written version concentrates on two new conceptual developments extending earlier concepts. One of these pertains to the problem of emitter/base junction grading. A grading scheme is proposed that extends the grading through the base region and creates a graded-gap base. The other proposes an extension of permeable base transistor technology to bipolar transistors in what is called a gridded-base bipolar transistor. Both promise a further increase in device speed, largely by addressing themselves to the persistent problem of base resistance reduction. Several other topics, already contained in the author’s January 1982 review paper and presented orally at the Workshop, have been omitted from this printed version.