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This research proposes a novel AMOLED circuit that ensures stable driving current under pico-ampere conditions, suggesting improvements in display technology.
We propose an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based active-matrix organic light-emitting diode (AMOLED) pixel circuit that provides highly stable driving current even in the pico-ampere-range current region. The proposed circuit minimizes the stored threshold voltage ( VTH ) loss caused by parasitic capacitors through the indirect connection of switching TFTs (SWTs) at the beginning of the emission stage, demonstrating high compensation accuracy for OLED current below 1nA. The measured results confirmed that the relative current error rate, calculated from the average current of five measured circuits, remained within a maximum of 14.99%. Therefore, the proposed circuit can generate a stable driving current in the pico-ampere-range current region, even under VTH variations in the driving TFT (DRT).
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Park et al. (2026) studied this question.
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