Ultrathin Hafnium‐Based Ferroelectric Devices for In‐Memory Computing Applications

The discovery of ferroelectricity in HfO 2 ‐based ferroelectrics at the ultrathin scale has reignited enthusiasm for ferroelectric memory device research, propelling hafnium‐based ferroelectric devices to the forefront of nanoelectronics research. Simultaneously, the rapid advancement of big data technologies in the modern era has posed new challenges to traditional data storage and processing. This presents significant opportunities for hafnium‐based ferroelectric memory, which offers advantages such as nonvolatile storage, low power consumption, and ultrahigh speed, positioning it as a strong candidate for constructing hardware neural networks. This review summarizes the unique properties exhibited by hafnium‐based materials and their underlying mechanisms, which focus on robust ferroelectricity at ultrathin scales, the “reversed” size effect at the nanoscale, and highly promising hafnium‐based ultrathin films. Building on this foundation, the outstanding capabilities of hafnium‐based ferroelectric devices in the field of neuromorphic computing are further discussed. Finally, the prospects and remaining challenges of hafnium‐based ferroelectric memory devices are discussed to guide future advancements in hafnium‐based ferroelectric devices.