Photoluminescence Enhancement from Semiconductor Quantum Dot/Polymer Composite Thin Films Using Ag Films

Semiconductor quantum dots (QDs) are attractive materials for light-emitting devices, and the photoluminescence (PL) from QDs can be enhanced near a metal surface due to surface plasmon (SP) resonance. To integrate QDs into metal structures, QD/poly(methyl methacrylate) (PMMA) composite thin films are generally used. However, it has been reported that QDs tend to aggregate in the PMMA matrix. In this study, we fabricated two types of QD/polymer composite thin films with different degrees of QD aggregation by additionally using poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-MA), which is known to prevent QD aggregation. Furthermore, these two types of films were fabricated on Ag films, with the distance between the Ag films and the QDs controlled by Al2O3 spacer layers, and the PL enhancement was compared between the two film types. Finally, we reveal that QD aggregation in the polymer matrix significantly affects the PL enhancement. Although the aggregation trends differed between PMMA and PMMA-co-MA, the results suggest a possible increase in the internal quantum efficiency (IQE) in both film types.