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Proposes a novel process for fabricating terahertz Fresnel zone plates, indicating potential for compact terahertz components.
This study proposes a new fabrication process for terahertz Fresnel zone plates on high-resistivity silicon substrates. It involves ion implantation surface modification, ultra-precision diamond turning, and magnetron sputtering, followed by polishing. Ductile-regime cutting is used to form smooth microgrooves, which are selectively metallized to create alternating opaque and transparent zones for terahertz waves. Finite-element simulations are performed to design the zone structure and to evaluate the effect of process-induced radius errors. A 3 μm amorphous layer is formed via ion implantation, which significantly enhances the ductile-to-brittle transition depth of silicon from 55 nm to about 535 nm while causing only minor changes in terahertz transmittance. The results demonstrate that the proposed method can produce high-quality Fresnel zone plates on silicon and offers a practical route to compact diffractive terahertz components.
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Chen et al. (2026) studied this question.
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