Demonstrates the deposition and etching of ruthenium for integrated circuits, indicating the potential for nanostructured conductor fabrication.
The influence of plasma-enhanced atomic layer deposition (PEALD) process parameters on ruthenium layers using the organometallic precursor Ru(EtCp)2 and oxygen plasma was studied. Ruthenium oxide was shown to deposit at sample temperatures below 325°C. Metallic ruthenium was deposited in the 375–400°C range. Conformal ruthenium deposition in grooves with an aspect ratio of 3–5 was demonstrated. The influence of oxygen plasma treatment duration during PEALD was also studied. The results of studies on the possibilities of anisotropic nanoscale plasma etching of ruthenium film samples with the formation of conductors with cross-sectional dimensions of less than 30 × 30 nm are also presented.
No takes yet. Share an insight, caveat, or question.
Miakonkikh et al. (2025) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: