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March 28, 2026ACS Nano

Atomic-Scale Engineering and Strain Modulation of Quantum Defects in Hexagonal Boron Nitride

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Authors

TYTianhao YangPHPengru HuangZQZhizhan Qiu

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Overview

Research demonstrates engineering quantum defects in hexagonal boron nitride, highlighting implications for quantum technologies.

Key Points

  • The aim is to understand and manipulate atomic defects in hexagonal boron nitride to enhance quantum information applications.
  • Integrated scanning tunneling microscopy and spectroscopy with a CO-functionalized tip.
  • Controllable argon ion bombardment to create boron and nitrogen vacancies.
  • Probing electronic states of vacancies using scanning tunneling spectroscopy.
  • Identification of in-gap states with phonon replicas for nitrogen vacancies.
  • Nanobubble formation to decouple defects from the substrate.
  • Demonstration of strain modulation affecting electronic state positions in defects.

Cite This Study

Yang et al. (2026) studied this question.

synapsesocial.com/papers/69c772058bbfbc51511e22b2https://doi.org/10.1021/acsnano.5c22322
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