This report compares dislocation signatures in GaN layers on Si substrates, indicating the need for improved characterization methods.
Dislocations create elastic fields, detectable by surface-sensitive techniques like EBSD and ECCI. In this report, a field dislocation mechanics (FDM) model to compare surface and bulk dislocation signatures in GaN layers on Si substrates is used. Significant differences between surface and bulk fields highlight potential misinterpretations in surface-based dislocation characterization. Metrics for accurate dislocation characterization and perform virtual ECCI are established.
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Fatin El Ajjouri (2025) studied this question.
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