Theoretical analysis of band edge energy in diluted magnetic semiconductors reveals significant effects of p-d exchange integral.
The extended electron (hole) state in diluted magnetic semiconductors (DMS) like as AII1-xMnxCVI alloys is studied theoretically. Appling the dynamical coherent potential approximation (DCPA) to the model we proposed previously, we formulate the expression for the band edge energy of DMS with under a weak magnetic field. The results are compared with the abrormal x dependence in p-d exchange integral Noβ that is observed in Zn1-xMnxTe and Cd1-xMnxTe.
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Masao Takahashi (2001) studied this question.
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