Examines changes in conductivity and ESR signals in amorphous silicon films, indicating the role of annealing in modifying material properties.
Annealing behaviors of the ESR signal and the electrical conductivity and the secular change of them are investigated for rf-sputtered amorphous Si films annealed in N₂ or (N₂+H₂) gas. For the samples annealed in (N叶H2) gas, the secular change of the conductivity and the ESR signal was observed. It is suggested that most of spins in samples annealed above 400°C are dangling bonds around crystallites newly produced in the process of crystallization, and that the dangling bonds are easily wiped out with H₂ gas.
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長谷川 et al. (1978) studied this question.
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