Relation between deffect density and conductivity changes with light-soaking and annealing in a-Si:H

It is found in a-Si:H and N-doped a-Si:H that the ESR spin density N, increases and saturates with light-soaking slower than the dark-and photoconductivities (ad and ap) do. In the recovery process by annealing, the change in N. also occurs slower than ad and up. From the measurement of the activation energy for 9d the change in ad is found to originate mainly from the movement of the Fermi level EF. In order to elucidate the origin of different behaviors between N, and ad or ap, the light-induced ESR and the constant photocurrent method measurements have been carried out.