Investigates light-induced defects in silicon-based semiconductors, indicating their impact on conductivity and luminescence.
Light-induced creation of defects and their annealing process were studied by ESR, photoconductivity and photoluminescence measurements for a-Si//1// minus //xN//x:H and a-Si//1// minus //xC//x:H films besides a-Si:H films with various spin densities and H contents. The results show that the degradation of the photoconductivity and the photoluminescence is mainly attributed to creation of dangling bonds due to bond breaking.
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Morimoto et al. (1984) studied this question.
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