Review highlights crystalline diamond growth on silicon substrates, indicating potential for high power devices.
Crystalline diamond growth by microwave plasma CVD is reviewed. Highly oriented diamond nucleation and selective diamond growth on a Si substrate are demonstrated by using bias-enhanced nucleation (BEN) accompanying with atomic Si. We expect that the heterogeneous integration of diamond and Si LSI inspires development of the future high power device module.
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Hideo Isshiki (2017) studied this question.
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