Reports the activation energy and electrical properties of boron-doped diamond, indicating potential for electronic applications.
We have fabricated a p-type conductive layer on high-purity heteroepitaxial CVD diamond using a doping method with low-concentration B ion implantation from 10^17 to 10^18 cm^-3. Incident energies and fluences were calculated in advance using TRIM simulations to obtain a uniform concentration distribution up to 300 nm in depth. Concerning the substrate with a doping concentration of 5×10^17 cm^-3, the value of 0.36 eV corresponding to the activation energy of boron in diamond was observed based on the results of the Hall effect measurement analyzed by theoretical relations. The specific resistance at room temperature was about 1 kΩ cm, and the Hall mobility was about 160 cm^2/Vs.
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Yoshihara et al. (2024) studied this question.
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