The Analyses of Radiation Effects on SiGe HBT Devices for High-Speed Mixed-Signal Processing in Aerospace

This study presents a TCAD model of a SiGe HBT designed for high-speed data transfer, with a cutoff frequency of 246.5 GHz and a β-value up to 416.7. Comprehensive single-event transient (SET) irradiation simulations were performed by injecting charges at different junctions with various angles. The influence of SET on data transfer was further evaluated at circuit level by loading the SET model from TCAD simulation into a high-speed laser diode driver circuit. Hence, this work employed a collector dummy structure in the designed HBT to build radiation-hardened devices. Simulation results indicate significant mitigation of the single-event transient current, which could be reduced to 10%, compared with non-hardened devices.