Answers are grounded in this paper and cite their sources.
Demonstrates the formation of p-type ZnO/Ag/Fe/Cu films through DC-magnetron sputtering, highlighting their potential for optoelectronic applications.
By doping zinc with transition metals (Ag + Fe + Cu), the following targets were formed: Zn/Ag/Fe/Cu (Zn95, Ag2, Fe2, Cu 1%; Zn94, Ag2, Fe2, Cu2% and Zn92, Ag2, Fe3, Cu3%). Targets with insignificant changes in the Zn lattice parameters were obtained. Nanosized ZnO/Ag/Fe/Cu films with p-type conductivity on glass substrates at room temperature were formed by DC-magnetron sputtering of Zn/Ag/Fe/Cu targets at about 0.666 Pa. The structural, electrophysical, optical, and morphological characteristics of the obtained films were investigated using X-ray diffractometry (XRD), atomic force microscopy, UV/VIS spectroscopy, and Hall measurements. The diffraction patterns of the ZnO/Ag/Fe/Cu films revealed characteristic reflexes of interplanar spacings along the 002 and 101, as well as 100 and 010 crystallographic directions. The transmittance of the studied films was approximately 85–97% in the wavelength range of 460–930 nm. The concentration of free carriers in the ZnO/Ag/Fe/Cu films was approximately 1021 cm–3. The ZnO/Ag/Fe/Cu films can be integrated into optoelectronic devices as functional elements.
No takes yet. Share an insight, caveat, or question.
Arakelova et al. (2025) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: