The paper presents a profile analysis of Ta2O5 thin films using Auger electron spectroscopy and time-of-flight secondary ion mass spectrometry. An algorithm is proposed for determining the coefficients of relative elemental sensitivity, which are necessary for quantitative calculations of the distribution of element concentration over depth by Auger electron spectroscopy. The films were obtained as a result of various technological processes on silicon substrates and on silicon substrates with an intermediate layer of SiO2. On a reference sample of Ta2O5 film (European standard BCR-261T) with a thickness of 100 nm grown on Ta, the analysis conditions were worked out, taking into account the artifacts of ion etching and the effect of an electron beam on the sample, and reference Auger spectra of Ta2O5 and Ta were obtained and entered into the database, which were used for factor analysis of the spectra of the studied samples.
Goryachev et al. (Mon,) studied this question.