Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 26, 2017ACS Applied Materials & Interfaces

Trap Depth Engineering of SrSi2O2N2:Ln2+,Ln3+ (Ln2+ = Yb, Eu; Ln3+ = Dy, Ho, Er) Persistent Luminescence Materials for Information Storage Applications

View Full Paper
Ask AI
Bookmark
Share

Authors

YZYixi ZhuangXiamen UniversityYLYing LvPLA Information Engineering UniversityLWLe WangXiamen University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Zhuang et al. (2017) studied this question.

synapsesocial.com/papers/69d724d2236f4746d4563abahttps://doi.org/10.1021/acsami.7b17271
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Thermoluminescence and Kinetics of Persistent Luminescence of Vacuum-Sintered Tb3+-Doped and Tb3+,Ca2+-Codoped Lu2O3 Materials2008 · 247 citations
  2. 2Nanoprobes with near-infrared persistent luminescence for in vivo imaging2007 · 832 citations
  3. 3Rechargeable and LED-activated ZnGa 2 O 4 : Cr 3+ near-infrared persistent luminescence nanoprobes for background-free biodetection2017 · 172 citations
  4. 4Controlled Electron–Hole Trapping and Detrapping Process in GdAlO3 by Valence Band Engineering2016 · 89 citations
  5. 5Storage of Visible Light for Long-Lasting Phosphorescence in Chromium-Doped Zinc Gallate2013 · 404 citations