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Abstract Spatially resolved surface photovoltage spectroscopy (SRSPS) was employed to obtain direct evidence for highly anisotropic photogenerated charge separation on different facets of a single BiVO 4 photocatalyst. Through the controlled synthesis of a single crystal with preferentially exposed 010 facets, highly anisotropic photogenerated hole transfer to the 011 facet of single BiVO 4 crystals was observed. The surface photovoltage signal intensity on the 011 facet was 70 times stronger than that on the 010 facets. The influence of the built‐in electric field in the space charge region of different facets on the anisotropic photoinduced charge transfer in a single semiconductor crystal is revealed.
Zhu et al. (Fri,) studied this question.