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December 28, 2004IEEE Photonics Technology Letters

High-speed resonant cavity enhanced Ge photodetectors on reflecting Si substrates for 1550-nm operation

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Authors

ODOlufemi DosunmuApplied Materials (United States)DCD.D. CanMassachusetts Institute of TechnologyMEM.K. EmsleyApplied Materials (United States)

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Dosunmu et al. (2004) studied this question.

synapsesocial.com/papers/69d77184db9d5e1bf4b8a9b2https://doi.org/10.1109/lpt.2004.836917
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