In this paper we review our recent results on group IV mid-infrared photonic devices. In particular, passive structures suitable for long wavelength operation, such as suspended Si, Ge-on-Si and suspended Ge, are analyzed. In addition, Ge-on-insulator waveguides have been characterized at 3.8 μm. Several active devices have been also realized: optical modulators in silicon and germanium, and silicon and graphene detectors operating at shorter mid-IR wavelengths.
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Mashanovich et al. (2018) studied this question.
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