Recent progress in doping of CuSCN for electronic and photonic applications

Chitsanucha Chattakoonpaisarn; Pichaya Pattanasattayavong

doi:10.1039/d6tc00625f

January 1, 2026Journal of Materials Chemistry C

Recent progress in doping of CuSCN for electronic and photonic applications

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Key Points

This research aims to explore advancements in doping copper(I) thiocyanate (CuSCN) for its use in electronic and photonic applications.
Review of recent literature on doping strategies for CuSCN
Analysis of its applications in dye-sensitized solar cells and other devices
Comparison of CuSCN with other hole-transporting materials
Doped CuSCN shows improved electrical properties
Enhanced performance observed in solid-state devices
Greater efficiency in dye-sensitized solar cells compared to undoped counterparts

Implication

Progress in doping copper(I) thiocyanate improves its function in electronic applications, suggesting enhanced performance potential.

Abstract

Copper(I) thiocyanate (CuSCN) has emerged from a hole conductor in all-solid-state dye-sensitized solar cells (DSSCs) to become one of the standard p-type inorganic semiconductors or hole-transporting materials in an ever-expanding...

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Cite This Study

Chattakoonpaisarn et al. (2026) studied this question.

synapsesocial.com/papers/69d895206c1944d70ce060fa https://doi.org/10.1039/d6tc00625f

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Recent progress in doping of CuSCN for electronic and photonic applications

Key Points

Implication

Abstract

Discussion

Cite This Study

Recent progress in doping of CuSCN for electronic and photonic applications

Key Points

Implication

Abstract

Discussion

Cite This Study

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