Short Circuit Withstand Time Screening of 1.2 kV Commercial SiC MOSFETs: A Non-Destructive Approach

This is the authors' abstract. We don't add key points for this paper.

SiC MOSFETs are becoming increasingly popular due to their superior material properties, but they lack the required reliability and ruggedness for safe applications. One of the biggest challenges in short-circuit (SC) reliability of the commercial devices and hence in the SC protection circuit design is the variability of SC withstand time (SCWT) among the devices from the same vendor, even with the same lot and batch number. In this work, a novel SC screening methodology has been presented to remove devices with lower SCWT from a pool of devices without damaging the reliable ones. The SC screening methodology has been developed using Sentaurus TCAD simulation, which is further verified using commercial devices. This work can potentially reduce field failure and, as a result, can enhance the reliability of the SiC MOSFETs in real-world applications.