What question did this study set out to answer?

To calculate the critical layer thickness for growth of germanium-silicon strained layers on silicon substrates across the full compositional range based on an energy balance approach.

August 1, 1985Applied Physics Letters

Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures

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Authors

RPR. PeopleAlcatel Lucent (Germany)JBJ. C. BeanStevens Institute of Technology

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Overview

Theoretical modeling calculates critical layer thickness across germanium concentrations in silicon heterostructures, suggesting an energy balance mechanism governs misfit dislocation formation.

Key Points

To calculate the critical layer thickness for growth of germanium-silicon strained layers on silicon substrates across the full compositional range based on an energy balance approach.
Applied an energy balance framework assuming misfit dislocations initiate when the areal strain energy density exceeds the energy needed to form a screw dislocation at a distance matching layer thickness.
Calculated critical layer thickness across the complete alloy composition spectrum from x = 0 to x = 1.0.
Identified that films exceeding the calculated critical thickness generate screw and edge dislocations at the film-substrate interface.
Calculated values for critical layer thickness versus lattice mismatch demonstrated agreement with experimental measurements in germanium-silicon strained layers on silicon substrates.

Cite This Study

People et al. (1985) studied this question.

synapsesocial.com/papers/69d91c3eccb0bba5a56841ef https://doi.org/10.1063/1.96206

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August 1, 1985Applied Physics Letters

Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures

View Full Paper

Ask AI

Bookmark

Authors

RPR. PeopleAlcatel Lucent (Germany)JBJ. C. BeanStevens Institute of Technology

Discussion

Member takes

Overview

Theoretical modeling calculates critical layer thickness across germanium concentrations in silicon heterostructures, suggesting an energy balance mechanism governs misfit dislocation formation.

Key Points

To calculate the critical layer thickness for growth of germanium-silicon strained layers on silicon substrates across the full compositional range based on an energy balance approach.
Applied an energy balance framework assuming misfit dislocations initiate when the areal strain energy density exceeds the energy needed to form a screw dislocation at a distance matching layer thickness.
Calculated critical layer thickness across the complete alloy composition spectrum from x = 0 to x = 1.0.
Identified that films exceeding the calculated critical thickness generate screw and edge dislocations at the film-substrate interface.
Calculated values for critical layer thickness versus lattice mismatch demonstrated agreement with experimental measurements in germanium-silicon strained layers on silicon substrates.

Cite This Study

People et al. (1985) studied this question.

synapsesocial.com/papers/69d91c3eccb0bba5a56841ef https://doi.org/10.1063/1.96206

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