A rewriteable low-power operation nonvolatile physically flexible memristor device is demonstrated. The active component of the device is inexpensively fabricated at room temperature by spinning a TiO 2 sol gel on a commercially available polymer sheet. The device exhibits memory behavior consistent with a memristor, demonstrates an on/off ratio greater than 10 000 : 1, is nonvolatile for over 1.2 times 10 6 s, requires less than 10 V, and is still operational after being physically flexed more than 4000 times.
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Gergel-Hackett et al. (2009) studied this question.
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