December 1, 2008

Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

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Abstract

We investigate extremely low programming current and fast switching time of a perpendicular tunnel-magnetoresistance (P-TMR) for spin-transfer torque using a P-TMR cell of 50 nm-diameter. A L1 0 -crystalline ordered alloy is used as a free layer that has excellent thermal stability and a damping constant of about 0.03. The programming current of 49 uA and the switching time of 4 nsec are also demonstrated.

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Kishi et al. (Mon,) studied this question.

synapsesocial.com/papers/69d975c3a1d151c65f68429e https://doi.org/https://doi.org/10.1109/iedm.2008.4796680

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