What question did this study set out to answer?

To examine the influence of layer number and stacking configuration on ferroelectric polarization in few-layer α-In2Se3 crystals.

December 10, 2020Materials Horizons

Layer-dependent ferroelectricity in 2H-stacked few-layer α-In₂Se₃

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To examine the influence of layer number and stacking configuration on ferroelectric polarization in few-layer α-In2Se3 crystals.
Characterized 2H-stacked crystal configurations in few-layer α-In2Se3 samples.
Evaluated electrical polarization behavior across varying layer thicknesses.
Demonstrated that ferroelectric polarization in 2H-stacked α-In2Se3 depends directly on layer count.
Identified that adjacent layers undergo a 180-degree in-plane rotation responsible for the observed polarization behavior.

Implication

Experimental study reveals layer-dependent ferroelectric polarization in 2H-stacked α-In2Se3, indicating structural control of nanoscale ferroelectricity.

Abstract

Layer-dependent ferroelectric polarization in 2H-stacked α-In₂Se₃attributed to a 180 degree in-plane rotation in the adjacent layers is reported.

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Cite This Study

Lv et al. (2020) studied this question.

synapsesocial.com/papers/69d979ba94760e72e6a3ca09 https://doi.org/10.1039/d0mh01863e

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Implication

Experimental study reveals layer-dependent ferroelectric polarization in 2H-stacked α-In2Se3, indicating structural control of nanoscale ferroelectricity.

Abstract

Layer-dependent ferroelectric polarization in 2H-stacked α-In₂Se₃attributed to a 180 degree in-plane rotation in the adjacent layers is reported.

Layer-dependent ferroelectricity in 2H-stacked few-layer α-In₂Se₃

Key Points

Implication

Abstract

Discussion

Cite This Study

Layer-dependent ferroelectricity in 2H-stacked few-layer α-In₂Se₃

Key Points

Implication

Abstract

Discussion

Cite This Study

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