A high-performance stacked double-layer N-channel poly-Si nanosheet (NS) multigate thin-film transistor (DLNS-TFT) is demonstrated successfully. The proposed device has low cost, is easy to fabricate, and is compatible with Si MOSFET, active-matrix organic light-emitting diode, and active-matrix liquid-crystal display fabrication. This DLNS-TFT reveals high driving current (> 10 5 A/um), high Ion/Ioff ratio (> 10 8 ), high mobility (42 cm 2 /Vs), and low parasitic resistance, when compared with single-layer nanosheet TFT. The DLNS-TFT also has a high density and satisfies the driving current monolithic multilayer 3-D IC in the ITRS 2015 version technology roadmap to the year 2030.
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Chen et al. (2017) studied this question.
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