Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
December 15, 1993Physical review. B, Condensed matter

Effect of strain on phonons in Si, Ge, and Si/Ge heterostructures

View Full Paper
Ask AI
Bookmark
Share

Authors

ZSZhifeng SuiShanxi Agricultural UniversityIHIrving P. HermanEden Medical Center

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Sui et al. (1993) studied this question.

synapsesocial.com/papers/69d9c7be2a25b240b7a3db26https://doi.org/10.1103/physrevb.48.17938
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Raman analysis of Si/Ge strained-layer superlattices under hydrostatic pressure1991 · 34 citations
  2. 2Indirect, quasidirect, and direct optical transitions in the pseudomorphic (44)-monolayer Si-Ge strained-layer superlattice on Si(001)1987 · 93 citations
  3. 3Structure and optical properties of Ge-Si ordered superlattices1987 · 70 citations
  4. 4Measurement of Third-Order Moduli of Silicon and Germanium1964 · 254 citations
  5. 5Surface effects in uniaxially stressed crystals: the internal-strain parameters of silicon and germanium revised1987 · 44 citations